AIMW120R045M1 Datasheet Download - Infineon Technologies AG

AIMW120R045M1
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET

 

Features
 Revolutionary semiconductor material - Silicon Carbide
 Very low switching losses
 Threshold-free on state characteristic
 IGBT-compatible driving voltage (15V for turn-on)
 0V turn-off gate voltage
 Benchmark gate threshold voltage, VGS(th)=4.5V
 Fully controllable dv/dt
 Commutation robust body diode, ready for synchronous rectification
 Temperature independent turn-off switching losses

 

 

 

AIMW120R045M1_datasheet.pdf

1.41MB

 

AIMW120R045M1 Table of contents
Features 1
Benefits 1
Potential Applications........................................................................................................1
Product Validation...............................................................................................................1
Table of contents.................................................................................................................2
1 Maximum ratings........................................................................................................... 3
2 Thermal resistances....................................................................................................... 4
3 Electrical Characteristics ...........................................................................................  5
3.1 Static characteristics...................................................................................................5
3.2 Dynamic characteristics.............................................................................................6
3.3 Switching characteristics...........................................................................................7
4 Electrical characteristic diagrams..............................................................................8
5 Package drawing ..........................................................................................................14
6 Test conditions................................................................................................................15
Revision History ..............................................................................................................16