AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, VGS(th)=4.5V Fully controllable dv/dt Commutation robust body diode, ready..
